发明申请
US20110174630A1 FILM FORMATION METHOD AND STORAGE MEDIUM 审中-公开
电影形成方法和存储媒体

  • 专利标题: FILM FORMATION METHOD AND STORAGE MEDIUM
  • 专利标题(中): 电影形成方法和存储媒体
  • 申请号: US13054331
    申请日: 2010-08-27
  • 公开(公告)号: US20110174630A1
    公开(公告)日: 2011-07-21
  • 发明人: Yasuhiko KojimaShuji Azumo
  • 申请人: Yasuhiko KojimaShuji Azumo
  • 申请人地址: JP Tokyo
  • 专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2009-215415 20090917
  • 国际申请: PCT/JP2010/064572 WO 20100827
  • 主分类号: C23C28/02
  • IPC分类号: C23C28/02
FILM FORMATION METHOD AND STORAGE MEDIUM
摘要:
A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.
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