发明申请
- 专利标题： STRAINED CMOS DEVICE, CIRCUIT AND METHOD OF FABRICATION
- 专利标题（中）： 应变CMOS器件，电路和制造方法
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申请号： US12689339申请日： 2010-01-19
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公开(公告)号： US20110175166A1公开(公告)日： 2011-07-21
- 发明人: Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Devendra K. Sadana , Ghavam G. Shahidi
- 申请人： Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Devendra K. Sadana , Ghavam G. Shahidi
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/782
摘要：
A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p-type transistor is formed on the at least one short fin. The strain in the n-type transistor improves performance.
公开/授权文献
- US08169025B2 Strained CMOS device, circuit and method of fabrication 公开/授权日：2012-05-01
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