发明申请
- 专利标题： SOLID-STATE IMAGING DEVICE
- 专利标题（中）： 固态成像装置
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申请号： US12875534申请日： 2010-09-03
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公开(公告)号： US20110175187A1公开(公告)日： 2011-07-21
- 发明人: Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
- 申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-10104 20100120
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
公开/授权文献
- US08338901B2 Solid-state imaging device 公开/授权日：2012-12-25
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