摘要:
A solid-state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and comprising an imaging region including a plurality of pixel blocks each including a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system comprising a microlens array including a plurality of microlenses each corresponding to one of the pixel blocks, and reducing and re-forming the image to be formed on the imaging plane on the pixel blocks corresponding to the respective microlenses. The imaging plane of the first optical system is located further away from the first optical system than the imaging element when the object is located at an infinite distance.
摘要:
A solid-state imaging device according to an embodiment includes: a first optical system configured to form an image of an object on an image formation plane; an imaging element comprising an imaging area which includes a plurality of pixel blocks each including a plurality of pixels; a second optical system configured to include a microlens array including a plurality of microlenses provided to correspond to the plurality of pixel blocks and reduce and re-form an image scheduled to be formed on the image formation plane, in a pixel block corresponding to an individual microlens; and a signal processing unit configured to perform image signal processing with an optical position relation between each microlens and the pixel block corrected, by using an image signal of the object obtained by the imaging element.
摘要:
According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.
摘要:
According to one embodiment, a solid-state imaging device includes a pixel array and an infrared light eliminating portion. The pixel array has a plurality of pixel cells arranged as being array-shaped. The pixel array detects a signal level of each color light as being shared for each pixel cell. The infrared light eliminating portion eliminates infrared light from light proceeding toward a photoelectric conversion element. The infrared light eliminating portion is arranged for each pixel cell. The infrared light eliminating portion has selection wavelength being set in accordance with color light to be a detection target of the pixel cell.
摘要:
In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element.
摘要:
A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要:
According to one embodiment, a camera shake correction device includes a substrate, a fixed part, a linking part, a movable part, a first spring part, a second spring part, a first damper, and a second damper. The fixed part is provided on the substrate and fixed to the substrate. The linking part is provided around the fixed part on the substrate that can move in a first direction within a plane of the substrate with respect to the fixed part. The movable part is provided on the substrate and arranged around the fixed part and the linking part that can move in a second direction that intersects with the first direction within the plane of the substrate.
摘要:
A radiation detection apparatus according to an embodiment includes: a scintillator including a fluorescent material to convert radiation to visible radiation photon; a photon detection device array having a plurality of cells each of which includes a photon detection device to detect visible radiation photon emitted from a fluorescent material in the scintillator and convert the visible radiation photon to an electric signal; and a plurality of lenses provided on cells respectively in association with the cells to cause the visible radiation photon to be incident on the photon detection device in an associated cell.
摘要:
A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.
摘要:
Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.