发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13062262申请日: 2009-10-05
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公开(公告)号: US20110175213A1公开(公告)日: 2011-07-21
- 发明人: Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
- 申请人: Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
- 优先权: JP2008-264141 20081010
- 国际申请: PCT/JP2009/067349 WO 20091005
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L21/60
摘要:
A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.
公开/授权文献
- US08569892B2 Semiconductor device and manufacturing method thereof 公开/授权日:2013-10-29
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