Invention Application
- Patent Title: Chip capacitor embedment method
- Patent Title (中): 片式电容器嵌入法
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Application No.: US13064542Application Date: 2011-03-30
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Publication No.: US20110179642A1Publication Date: 2011-07-28
- Inventor: Han Kim , Je-Gwang Yoo , Mi-Ja Han , Dae-Hyun Park
- Applicant: Han Kim , Je-Gwang Yoo , Mi-Ja Han , Dae-Hyun Park
- Applicant Address: KR Suwon
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon
- Priority: KR10-2007-0097722 20070928
- Main IPC: H05K3/30
- IPC: H05K3/30

Abstract:
A method of embedding a chip capacitor in a printed circuit board including a first conductive layer and a dielectric layer placed on the first conductive layer includes removing the dielectric layer to form a cavity exposing the first conductive layer; seating a chip capacitor in the cavity; filling a filled material at a space excluding a space occupied by the chip capacitor in the cavity; forming a via penetrating the filled material and being connected to the chip capacitor; and stacking a conductive material to constitute a second conductive layer in surfaces of the via and the dielectric layer and in an surface of the filled material filled in the cavity.
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