发明申请
- 专利标题: PLATING METHOD AND PLATING APPARATUS
- 专利标题(中): 电镀方法和镀膜装置
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申请号: US13014931申请日: 2011-01-27
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公开(公告)号: US20110180412A1公开(公告)日: 2011-07-28
- 发明人: Masashi SHIMOYAMA , Fumio Kuriyama , Masanori Hayase
- 申请人: Masashi SHIMOYAMA , Fumio Kuriyama , Masanori Hayase
- 优先权: JP2010-015139 20100127
- 主分类号: C25D5/02
- IPC分类号: C25D5/02 ; C25B9/00
摘要:
A plating method can fill a plated metal into interconnect recesses at a higher rate without forming voids in the plated metal embedded in the interconnect recesses. The plating method includes: preparing a substrate having interconnect recesses in a surface; carrying out first pretreatment of the substrate by immersing the substrate in a first pretreatment solution containing an accelerator, a metal ion and an acid; carrying out second pretreatment of the substrate by immersing the substrate in a second pretreatment solution containing an additive which inhibits the effect of the accelerator contained in the first pretreatment solution, and not containing an accelerator; and then carrying out electroplating of the substrate surface by using a plating solution containing at least a metal ion, an acid and a suppressor, and not containing an accelerator, thereby filling the plated metal into the interconnect recesses.