发明申请
US20110182099A1 SEMICONDUCTOR MEMORY DEVICE FOR REDUCING BIT LINE COUPLING NOISE
有权
用于减少位线耦合噪声的半导体存储器件
- 专利标题: SEMICONDUCTOR MEMORY DEVICE FOR REDUCING BIT LINE COUPLING NOISE
- 专利标题(中): 用于减少位线耦合噪声的半导体存储器件
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申请号: US12917832申请日: 2010-11-02
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公开(公告)号: US20110182099A1公开(公告)日: 2011-07-28
- 发明人: Sang-yun Kim , Tai-young Ko
- 申请人: Sang-yun Kim , Tai-young Ko
- 优先权: KR10-2010-0006498 20100125
- 主分类号: G11C5/02
- IPC分类号: G11C5/02
摘要:
A semiconductor memory device including: first and second memory cell arrays each including at least one word line, at least three bit lines, and memory cells; and a sense amplifier area disposed between the first and second memory cell arrays and including a sense amplifier circuit for sensing and amplifying data of the memory cells, wherein the at least three bit lines of the first memory cell array and the at least three bit lines of the second memory cell array extend in a first direction and the at least three bit lines of the first and the second memory cell arrays are respectively connected to data lines disposed in a second direction, and wherein a bit line located between two of the at least three bit lines of each of the first and the second memory cell arrays is connected to an outermost data line of the data lines.