发明申请
US20110183279A1 SUBSTRATE HEATING APPARATUS, SUBSTRATE HEATING METHOD AND SUBSTRATE PROCESSING SYSTEM 审中-公开
基板加热装置,基板加热方法和基板加工系统

  • 专利标题: SUBSTRATE HEATING APPARATUS, SUBSTRATE HEATING METHOD AND SUBSTRATE PROCESSING SYSTEM
  • 专利标题(中): 基板加热装置,基板加热方法和基板加工系统
  • 申请号: US13014111
    申请日: 2011-01-26
  • 公开(公告)号: US20110183279A1
    公开(公告)日: 2011-07-28
  • 发明人: Tomoya OKUBOMasaki SUGIYAMA
  • 申请人: Tomoya OKUBOMasaki SUGIYAMA
  • 申请人地址: JP Tokyo
  • 专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2010-015600 20100127
  • 主分类号: F27D1/00
  • IPC分类号: F27D1/00
SUBSTRATE HEATING APPARATUS, SUBSTRATE HEATING METHOD AND SUBSTRATE PROCESSING SYSTEM
摘要:
A substrate heating apparatus includes a container configured to be maintained in a depressurized state; and a substrate mounting table having a plurality of substrate support pins on its upper surface. The substrate mounting table is configured to mount a substrate while providing a gap between the upper surface of the substrate mounting table and the substrate. The substrate heating apparatus further includes a heater configured to heat the substrate through the substrate mounting table; a pressure regulator configured to regulate a pressure in the container; a temperature controller configured to control an output of the heater so as to control a temperature of the substrate mounting table; and a pressure controller configured to control the pressure regulator so as to control the pressure in the container.
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