发明申请
US20110183440A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND THIN FILM DEVICE
审中-公开
半导体器件及其制造方法及薄膜器件
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND THIN FILM DEVICE
- 专利标题（中）： 半导体器件及其制造方法及薄膜器件
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申请号： US13081854申请日： 2011-04-07
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公开(公告)号： US20110183440A1公开(公告)日： 2011-07-28
- 发明人: Osamu Matsuura
- 申请人： Osamu Matsuura
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2005-236935 20050817; JP2006-209930 20060801
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying PLA pretreatment to the insulation film in an NH3 atmosphere, forming a Ti film over the contact plug, nitriding the Ti film to form a TiN film as a part of a lower electrode of a capacitor, and forming a metal film as another part of the lower electrode of the capacitor on the titanium nitride film.
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