公开(公告)号：US07698717B2

公开(公告)日：2010-04-13

申请号：US11505410

申请日：2006-08-17

申请人： Katsuyoshi Asakura ,  Tomoyuki Takahashi ,  Osamu Matsuura

发明人： Katsuyoshi Asakura ,  Tomoyuki Takahashi ,  Osamu Matsuura

IPC分类号： G11B23/03

CPC分类号： G11B23/0308 ,  G11B17/043

摘要： A system for recording/reproducing a photosensitive recording medium, comprising: a photosensitive recording medium cartridge including a cartridge body, a shutter, and a lock mechanism as defined herein; and a recording/reproducing device including a housing, an insertion port shutter, an unlock mechanism, and a shutter opening mechanism as defined herein.

摘要翻译： 一种用于记录/再现感光记录介质的系统，包括：包括如本文所定义的盒体，快门和锁定机构的感光记录介质盒; 以及包括如本文所定义的壳体，插入口挡板，解锁机构和快门打开机构的记录/再现装置。

公开(公告)号：US07303718B2

公开(公告)日：2007-12-04

申请号：US10485387

申请日：2003-06-06

申请人： Shinsuke Kishi ,  Osamu Matsuura

发明人： Shinsuke Kishi ,  Osamu Matsuura

IPC分类号： B29C45/20

CPC分类号： B29C45/2602 ,  B29C45/20 ,  B29C45/2756 ,  B29K2101/12 ,  B29L2017/005

摘要： A space 12 is formed at a tip portion of a nozzle 1 so as to decrease a thermal transfer of the nozzle 1. Alternatively, a center portion of one of a semi-spherically protruded surface of the tip portion of the nozzle 1 and a semi-spherically recessed surface of a sprue bush protrudes so that the radius of curvature of one semi-spherical surface is the same as the radius of curvature of the other semi-spherical surface. As a result, since the nozzle 1 and the sprue bush 2 are surface-contacted, heat of the tip portion of the nozzle 1 absorbed to the sprue bush 2 is increased. Thus, the temperature of the tip portion of the nozzle 1 can be lowered easily. After the resin material injected into the molding cavity 11 is cooled, when the sprue portion is removed from the fixed die, a tip portion of a rod-shaped protrusion portion of the sprue can be properly cut.

摘要翻译： 在喷嘴1的前端形成空间12，以减小喷嘴1的热传递。 或者，喷嘴1的前端部的半球面的一个的中心部分和直浇道衬套的半球形凹入表面突出，使得一个半球面的曲率半径与 另一个半球面的曲率半径。 结果，由于喷嘴1和浇口衬套2被表面接触，所以喷嘴1的顶端部分吸收到浇道衬套2的热量增加。 因此，能够容易地降低喷嘴1的前端部的温度。 在注入到模腔11中的树脂材料被冷却之后，当浇口部分从固定模具中取出时，可以适当地切割浇道的棒状突出部分的尖端部分。

公开(公告)号：US20070029595A1

公开(公告)日：2007-02-08

申请号：US11580198

申请日：2006-10-13

申请人： Shigeyoshi Umemiya ,  Osamu Matsuura

发明人： Shigeyoshi Umemiya ,  Osamu Matsuura

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.

摘要翻译： 由Ir制成的底部电极（52），PZT膜的初始层（53），芯层（54）和端接层（55）以及由IrO 2制成的顶部电极（56） / SUB>形成在下衬膜（51）上。 初始层（53）形成为厚度为5nm的低氧分压。 芯层（54）的厚度设定为120nm。 端接层（55）被设定为过量的Zr层。 换句话说，对于终止层（55）的组成，“Zr /（Zr + Ti）”被设定为大于0.5，并且在终止层（55）中，Zr含有比常态相更多的Zr 边界组成。

公开(公告)号：US20060083059A1

公开(公告)日：2006-04-20

申请号：US11249453

申请日：2005-10-14

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： G11C16/04

CPC分类号： G11C16/20 ,  G11C16/3468 ,  G11C16/3477

摘要： In a semiconductor device comprising a non-volatile memory, a reset input control circuit is provided not to supply the reset signal to the non-volatile memory even when the reset signal is supplied from the external side while the BUSY/READY signal from the non-volatile memory is activated. With the reset input control circuit, over-erase of the non-volatile memory can e prevented because reset is never conducted while the non-volatile memory executes the erase process.

摘要翻译： 在包括非易失性存储器的半导体器件中，即使在来自非易失性存储器的BUSY / READY信号从外部提供复位信号时，也提供复位输入控制电路，以便不将复位信号提供给非易失性存储器 非易失存储器被激活。 利用复位输入控制电路，可以防止非易失性存储器的过擦除，因为在非易失性存储器执行擦除处理时不会进行复位。

公开(公告)号：US06812510B2

公开(公告)日：2004-11-02

申请号：US10369720

申请日：2003-02-21

申请人： Yoshimasa Horii ,  Osamu Matsuura ,  Katsuyoshi Matsuura ,  Kazuaki Takai

发明人： Yoshimasa Horii ,  Osamu Matsuura ,  Katsuyoshi Matsuura ,  Kazuaki Takai

IPC分类号： H01L2976

CPC分类号： H01L29/516 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691 ,  H01L28/55

摘要： A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×1018 cm−3 or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×1018 cm−3 or less.

摘要翻译： 具有铁电体层和铁电层含有5×10 18 cm -3以下的碳原子或碳原子的铁电体层和一对电极的铁电电容器和该电极对由MOCVD（金属有机化学 气相沉积）法。 一种制造铁电电容器的方法，该方法具有以下步骤：在一对电极之一上形成铁电层; 在高于形成层的温度下加热层，并在铁电层上形成另一个电极，或在一对电极之一上形成铁电层的步骤; 在铁电层上形成另一电极; 并且在比形成该层高的温度下加热该层，以在铁电层上形成另一个电极，以控制铁电层的碳原子为5×10 18 cm -3以下。

公开(公告)号：US4557519A

公开(公告)日：1985-12-10

申请号：US458884

申请日：1983-01-18

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： B62D25/08 ,  B62D25/20 ,  B62D23/00

CPC分类号： B62D25/2027 ,  B62D25/087

摘要： An automobile body structure has a closed cross-section structure formed by a lower face of a rear floor panel of a body floor and a rear frame joined to the lower face of the rear floor panel and extended in the longitudinal direction of the body on either side thereof, and another closed cross-section structure formed by a lower face of a front floor panel of the body floor and a front frame joined to the lower face of the front floor panel and extended in the longitudinal direction of the body. The rear frame is joined at its forward extension to a side sill of the body forward of a rear wheelhouse. The front frame is joined at its rearward extension to the portion where the forward extension of the rear frame is joined to the side sill.

摘要翻译： 汽车车身结构具有闭合的横截面结构，该主体结构由主体地板的后底板的下表面和与后地板面板的下表面接合并在主体的纵向方向上延伸的后框架形成 以及由主体地板的前地板面板的下表面形成的另一封闭的横截面结构，以及连接到前地板镶板的下表面并沿主体的纵向方向延伸的前框架。 后框架在其前延伸处连接到后轮车厢前方的主体的下纵梁。 前框架在其后延伸部处连接到后框架的向前延伸部连接到下纵梁的部分。

公开(公告)号：US08021896B2

公开(公告)日：2011-09-20

申请号：US12068916

申请日：2008-02-13

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： H01L21/8246

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor substrate with an insulating film, a barrier layer containing a metal and formed over the insulating film in a region that includes a peripheral edge part of a semiconductor substrate, a capacitor lower electrode layer formed on the barrier layer and having an edge-cut on the peripheral edge part of the semiconductor substrate, an oxide layer formed on the barrier layer at the peripheral edge part where the barrier layer is not covered by the lower electrode layer, a ferroelectric layer formed on the lower electrode layer and the oxide layer, and a capacitor upper electrode layer formed over the ferroelectric layer.

摘要翻译： 一种具有绝缘膜的半导体衬底，包含金属的阻挡层，并且在包括半导体衬底的周缘部分的区域中形成在绝缘膜上，电容器下电极层，形成在阻挡层上并具有边缘切割 在半导体基板的周边部分上形成有阻挡层未被下部电极层覆盖的外围边缘部分的阻挡层上形成的氧化物层，形成在下部电极层上的铁电层和氧化物层， 以及形成在铁电层上的电容器上电极层。

公开(公告)号：US20110183440A1

公开(公告)日：2011-07-28

申请号：US13081854

申请日：2011-04-07

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： H01L21/02

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying PLA pretreatment to the insulation film in an NH3 atmosphere, forming a Ti film over the contact plug, nitriding the Ti film to form a TiN film as a part of a lower electrode of a capacitor, and forming a metal film as another part of the lower electrode of the capacitor on the titanium nitride film.

摘要翻译： 公开了一种半导体器件的制造方法。 该制造方法包括以下步骤：在绝缘膜上形成接触塞以连接到半导体衬底上的元件，在NH3气氛中对绝缘膜进行PLA预处理，在接触塞上形成Ti膜，氮化 该Ti膜形成作为电容器的下部电极的一部分的TiN膜，并且形成作为氮化钛膜上的电容器的下部电极的另一部分的金属膜。

公开(公告)号：US07633107B2

公开(公告)日：2009-12-15

申请号：US11505417

申请日：2006-08-17

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： On forming a ferroelectric capacitor structure, an IrO2 film and an IrOx film which are constituents of an upper electrode layer are sequentially formed on a capacitor film. By RTA treatment at 600° C. to 750° C., in this case, at 725° C. for about one minute under an O2 atmosphere, only a surface layer of the IrOx film is oxidized, and a highly oxidized layer which is higher in oxidation degree as compared with the other portion of the IrOx film is formed.

摘要翻译： 在形成铁电体电容器结构时，依次在电容器膜上形成作为上电极层的成分的IrO 2膜和IrO x膜。 通过在600℃至750℃下的RTA处理，在这种情况下，在725℃下在O 2气氛下约1分钟，仅IrOx膜的表面层被氧化，并且高度氧化层 与IrOx膜的其他部分相比形成氧化度更高。

公开(公告)号：US07624407B2

公开(公告)日：2009-11-24

申请号：US11508208

申请日：2006-08-23

申请人： Katsuyoshi Asakura ,  Osamu Matsuura ,  Tomoyuki Takahashi

发明人： Katsuyoshi Asakura ,  Osamu Matsuura ,  Tomoyuki Takahashi

IPC分类号： G11B7/0037

CPC分类号： G11B23/0308 ,  G11B23/0317

摘要： A photosensitive recording medium cartridge comprising: a photosensitive recording medium; a cartridge body including a disc storage portion where the photosensitive recording medium is received rotatably, an opening portion formed in a side surface of the cartridge body in an insertion direction, shutter slide surfaces offset inward and formed in an outer surface of the cartridge body so as to be connected to the opening portion-side side surface, and an inner opening for exposing a center and a recording surface of the photosensitive recording medium to the outside; a shutter as defined herein; and a lid fixed to the side surface of the cartridge body so as to close the opening portion, wherein the shutter is attached to the shutter slide surfaces while the movement of the shutter is limited by the lid and first step portions formed in boundaries between the shutter slide surfaces and the outer surface.

摘要翻译： 一种感光记录介质盒，包括：感光记录介质; 盒体，其包括光盘存储部分，其中感光记录介质被可旋转地接收，在插入方向上形成在盒体的侧表面中的开口部分，向内偏移并形成在盒体的外表面中的挡板滑动表面， 连接到开口部侧侧面和用于将感光记录介质的中心和记录表面暴露于外部的内部开口; 本文定义的快门; 以及固定在盒主体的侧表面上的盖子，以便关闭开口部分，其中活门被安装到活门滑动表面，同时活门被运动限制在盖子和第一台阶部分之间 快门滑动表面和外表面。