发明申请
- 专利标题： Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process
- 专利标题（中）： 使用激光诱导热转印技术制造有机薄膜晶体管的方法
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申请号： US13056906申请日： 2009-08-05
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公开(公告)号： US20110186830A1公开(公告)日： 2011-08-04
- 发明人: Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
- 申请人： Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
- 申请人地址： GB Cambridgeshire
- 专利权人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人地址： GB Cambridgeshire
- 优先权： GB0814305.9 20080805
- 国际申请： PCT/GB2009/001925 WO 20090805
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; H01L21/20 ; H01L51/40 ; H01L21/28
摘要：
The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.
公开/授权文献
- US08476121B2 Organic thin film transistors and methods of making them 公开/授权日：2013-07-02
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