发明申请
- 专利标题： Multi-Direction Design for Bump Pad Structures
- 专利标题（中）： 凸块结构的多方向设计
-
申请号： US12700004申请日： 2010-02-04
-
公开(公告)号： US20110186988A1公开(公告)日： 2011-08-04
- 发明人: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Tzuan-Horng Liu
- 申请人： Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Tzuan-Horng Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L23/498
摘要：
An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction.
公开/授权文献
- US08546941B2 Multi-direction design for bump pad structures 公开/授权日：2013-10-01