发明申请
US20110189615A1 SEMICONDUCTOR PROCESSING METHOD OF MANUFACTURING MOS TRANSISTOR
审中-公开
制造MOS晶体管的半导体处理方法
- 专利标题: SEMICONDUCTOR PROCESSING METHOD OF MANUFACTURING MOS TRANSISTOR
- 专利标题(中): 制造MOS晶体管的半导体处理方法
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申请号: US12696056申请日: 2010-01-29
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公开(公告)号: US20110189615A1公开(公告)日: 2011-08-04
- 发明人: Tsung-Yu Hou , Tai-Heng Yu , Chien-Wei Su , Wen-Yi Teng
- 申请人: Tsung-Yu Hou , Tai-Heng Yu , Chien-Wei Su , Wen-Yi Teng
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A method of manufacturing MOS transistor includes providing a substrate having a gate formed thereon; forming a hard mask layer on the substrate, performing an acid treatment to a surface of the hard mask layer, forming a photoresist layer on the hard mask layer after performing the acid treatment, performing a photolithography process to pattern the photoresist layer and the hard mask layer, performing an etching process to form recesses in the substrate, and performing a SEG method to form epitaxial layers respectively in the recesses.