发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件及制造半导体器件的方法
-
申请号： US13021400申请日： 2011-02-04
-
公开(公告)号： US20110193101A1公开(公告)日： 2011-08-11
- 发明人: Naoko YANASE , Shingo Masuko , Takaaki Yasumoto , Ryoichi Ohara , Yorito Kakiuchi , Takao Noda , Kenya Sano
- 申请人： Naoko YANASE , Shingo Masuko , Takaaki Yasumoto , Ryoichi Ohara , Yorito Kakiuchi , Takao Noda , Kenya Sano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-027121 20100210
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/265
摘要：
According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
公开/授权文献
信息查询
IPC分类:
