发明申请
- 专利标题: High Endurance Non-Volatile Memory Devices
- 专利标题(中): 高耐久性非易失性存储器件
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申请号: US13089898申请日: 2011-04-19
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公开(公告)号: US20110197017A1公开(公告)日: 2011-08-11
- 发明人: I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
- 申请人: I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
- 申请人地址: US CA San Jose
- 专利权人: Super Talent Electronics, Inc.
- 当前专利权人: Super Talent Electronics, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/08
摘要:
High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
公开/授权文献
- US08019943B2 High endurance non-volatile memory devices 公开/授权日:2011-09-13
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