发明申请
- 专利标题： Polysilicon control etch-back indicator
- 专利标题（中）： 多晶硅控制回蚀指示器
-
申请号： US13066583申请日： 2011-04-18
-
公开(公告)号： US20110198588A1公开(公告)日： 2011-08-18
- 发明人: Yu Wang , Tiesheng Li , Sung-Shan Tai , Hong Chang
- 申请人： Yu Wang , Tiesheng Li , Sung-Shan Tai , Hong Chang
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
公开/授权文献
- US08193061B2 Polysilicon control etch-back indicator 公开/授权日：2012-06-05
信息查询
IPC分类:
