发明申请
US20110200941A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS
有权
用于EB或EUV光刻和图案处理的化学放大正电阻组合物
- 专利标题： CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS
- 专利标题（中）： 用于EB或EUV光刻和图案处理的化学放大正电阻组合物
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申请号： US13027356申请日： 2011-02-15
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公开(公告)号： US20110200941A1公开(公告)日： 2011-08-18
- 发明人: Keiichi MASUNAGA , Satoshi Watanabe , Akinobu TANAKA , Daisuke DOMON
- 申请人： Keiichi MASUNAGA , Satoshi Watanabe , Akinobu TANAKA , Daisuke DOMON
- 优先权： JP2010-031030 20100216
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/20
摘要：
A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
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