发明申请
- 专利标题： IGBT AND METHOD FOR MANUFACTURING IGBT
- 专利标题（中）： IGBT及其制造方法
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申请号： US13124774申请日： 2009-10-15
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公开(公告)号： US20110201187A1公开(公告)日： 2011-08-18
- 发明人: Tsuyoshi Nishiwaki , Jun Saito
- 申请人： Tsuyoshi Nishiwaki , Jun Saito
- 申请人地址： JP Toyota-shi
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota-shi
- 优先权： JP2008-273780 20081024
- 国际申请： PCT/JP2009/067844 WO 20091015
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/28
摘要：
A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.