CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

发明申请

US20110203659A1 CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES 失效

标题翻译：用于制造半导体器件的导电组合物和工艺

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专利标题： CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
专利标题（中）： 用于制造半导体器件的导电组合物和工艺
申请号： US13098855

申请日： 2011-05-02
公开(公告)号： US20110203659A1

公开(公告)日： 2011-08-25
发明人: Alan Frederick Carroll , Kenneth Warren Hang
申请人： Alan Frederick Carroll , Kenneth Warren Hang
申请人地址： US DE Wilmington
专利权人： E. I. DU PONT DE NEMOURS AND COMPANY
当前专利权人： E. I. DU PONT DE NEMOURS AND COMPANY
当前专利权人地址： US DE Wilmington
主分类号： H01L31/0224
IPC分类号： H01L31/0224 ; H01B1/22 ; H01L21/283 ; H01L29/45

CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

摘要：

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.

摘要（中）：

本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂; （c）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中。本发明还涉及由上述组合物形成的电极，其中所述组合物已被烧制以除去有机载体并烧结所述玻璃颗粒。另外，本发明涉及从由半导体构成的结构元件制造半导体器件的方法，所述结构元件由在半导体的主表面上形成的pn结和绝缘膜构成，包括以下步骤：（a）施加到所述绝缘上面详细介绍了薄膜组成; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。另外，本发明涉及通过上述方法形成的半导体器件以及由上述详细描述的厚膜导电组合物形成的半导体器件。

公开/授权文献

US08383017B2 Conductive compositions and processes for use in the manufacture of semiconductor devices 公开/授权日：2013-02-26

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/02	.零部件
H01L31/0224	..电极