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    Process for the production of a MWT silicon solar cell
    2.
    发明授权
    Process for the production of a MWT silicon solar cell 有权
    生产MWT硅太阳能电池的工艺

    公开(公告)号：US09054242B2

    公开(公告)日：2015-06-09

    申请号：US13022799

    申请日：2011-02-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24

    CPC分类号： H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

    Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
    5.
    发明授权
    Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices 有权
    含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08845932B2

    公开(公告)日：2014-09-30

    申请号：US13438124

    申请日：2012-04-26

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/02

    CPC分类号： H01B1/22 ,  H01L31/022425 ,  Y02E10/50

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种导电厚膜糊组合物，其包含导电Ag，选自Ni，Al及其混合物的第二导电金属和全部分散在有机介质中的无铅铋 - 碲氧化物 。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。

    Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices
    6.
    发明授权
    Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices 有权
    含铅 - 碲 - 锂 - 氧化钛的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08696948B2

    公开(公告)日：2014-04-15

    申请号：US13546223

    申请日：2012-07-11

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/22 ,  H01L31/0264

    CPC分类号： H01B1/22

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising Ag and a lead-tellurium-lithium-titanium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种包含Ag和分散在有机介质中的铅 - 碲 - 锂 - 二氧化钛的导电厚膜糊组合物。 本发明还涉及由糊料组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。

    THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
    7.
    发明申请
    THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES 有权
    厚膜镀银及其在半导体器件制造中的应用

    公开(公告)号：US20140097390A1

    公开(公告)日：2014-04-10

    申请号：US14034716

    申请日：2013-09-24

    申请人： KENNETH WARREN HANG ,  YUELI WANG

    发明人： KENNETH WARREN HANG ,  YUELI WANG

    IPC分类号： H01B1/16 ,  H01L31/0224

    CPC分类号： H01B1/16 ,  H01B1/22 ,  H01L31/0224 ,  H01L31/022425 ,  Y02E10/50

    摘要： The present invention is directed to an electroconductive silver thick film paste composition comprising Ag particles and a Bi—Cu—B—Zn-based glass frit dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.

    摘要翻译： 本发明涉及一种包含Ag颗粒和分散在有机介质中的Bi-Cu-B-Zn基玻璃料的导电银厚膜糊组合物。 本发明还涉及由糊料组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。 该糊剂特别适用于形成片状电极。

    Lead-free resistive composition
    9.
    发明授权
    Lead-free resistive composition 有权
    无铅电阻组成

    公开(公告)号：US08257619B2

    公开(公告)日：2012-09-04

    申请号：US12425048

    申请日：2009-04-16

    申请人： Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Constance Wenger, legal representative ,  Yuko Ogata

    发明人： Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Yuko Ogata

    IPC分类号： H01B1/20 ,  C03C8/02 ,  H01C7/00

    CPC分类号： C03C8/02 ,  C03C8/04 ,  C03C8/14 ,  C03C8/22 ,  H01B1/16 ,  H01C7/003 ,  H01C17/0654

    摘要： A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an α-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a δ-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO α-oxide and TiO2, Ta2O5, Nb2O5 β-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O α-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/−100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.

    摘要翻译： 公开了一种基本上无铅的厚膜电阻膏组合物，其包括分散在有机载体中的电阻组合物。 电阻组合物包括（a）RuO 2导电材料; （b）选自CuO，Na2O，K2O，Li2O及其组合的α-氧化物及其组合（c）硼硅酸盐玻璃组合物，其具有：（i）B 2 O 3，（ii）SiO 2，（iii）选自BaO， ，ZnO，SrO，MgO及其组合，并且任选地包括（iv）P 2 O 5，（v）ZrO 2和（vi）Al 2 O 3中的任何一种。 CuOα-氧化物和TiO 2，Ta 2 O 5，Nb 2 O 5和/或它们的组合分别存在于糊料组合物中或在硼硅酸盐玻璃组合物中，或两者均存在。 Na 2 O，K 2 O，Li 2 O的α-氧化物及其组合存在于硼硅酸盐玻璃组合物中。 通过由糊剂组合物制成的电阻器，可获得+/- 100ppm /℃范围内的TCR值和100欧姆至10兆欧每平方厘米的R值。