发明申请
- 专利标题： LAYERED STRUCTURES COMPRISING SILICON CARBIDE LAYERS, A PROCESS FOR THEIR MANUFACTURE AND THEIR USE
- 专利标题（中）： 包含碳化硅层的层状结构及其制造方法及其使用
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申请号： US12989661申请日： 2009-04-27
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公开(公告)号： US20110204382A1公开(公告)日： 2011-08-25
- 发明人: Alexander Traut , Norbert Wagner , Chien Hsueh Steve Shih
- 申请人： Alexander Traut , Norbert Wagner , Chien Hsueh Steve Shih
- 申请人地址： DE Ludwigshafen
- 专利权人： BASE SE
- 当前专利权人： BASE SE
- 当前专利权人地址： DE Ludwigshafen
- 优先权： EP08103863.0 20080508
- 国际申请： PCT/EP2009/055064 WO 20090427
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/04
摘要：
A layered structure comprising in this order: (A) a silicon carbide layer, (B) at least one stratum (b1) located at least one major surface of the silicon carbide layer (A), (b2) chemically bonded to the bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds, (b3) covering the at least one major surface of the silicon carbide layer (A) partially or completely, and (b4) having a higher polarity than a pure silicon carbide surface as exemplified by a contact angle with water which is lower than the contact angle of water with a pure silicon carbide surface; and (C) at least one dielectric layer, which covers the stratum or the strata (B) partially or completely and is selected from inorganic and inorganic-organic hybrid dielectric layers; a process for its manufacture and its use.
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