发明申请
US20110204446A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND RELATED FABRICATION METHODS
审中-公开
具有降低门高度的金属氧化物半导体晶体管及相关制造方法
- 专利标题： METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND RELATED FABRICATION METHODS
- 专利标题（中）： 具有降低门高度的金属氧化物半导体晶体管及相关制造方法
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申请号： US13098065申请日： 2011-04-29
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公开(公告)号： US20110204446A1公开(公告)日： 2011-08-25
- 发明人: Frank Bin YANG , Rohit PAL , Scott LUNING
- 申请人： Frank Bin YANG , Rohit PAL , Scott LUNING
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A metal oxide semiconductor transistor device having a reduced gate height is provided. One embodiment of the device includes a substrate having a layer of semiconductor material, a gate structure overlying the layer of semiconductor material, and source/drain recesses formed in the semiconductor material adjacent to the gate structure, such that remaining semiconductor material is located below the source/drain recesses. The device also includes shallow source/drain implant regions formed in the remaining semiconductor material, and epitaxially grown, in situ doped, semiconductor material in the source/drain recesses.
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