摘要:
A metal oxide semiconductor transistor device having a reduced gate height is provided. One embodiment of the device includes a substrate having a layer of semiconductor material, a gate structure overlying the layer of semiconductor material, and source/drain recesses formed in the semiconductor material adjacent to the gate structure, such that remaining semiconductor material is located below the source/drain recesses. The device also includes shallow source/drain implant regions formed in the remaining semiconductor material, and epitaxially grown, in situ doped, semiconductor material in the source/drain recesses.
摘要:
A metal oxide semiconductor transistor device having a reduced gate height is provided. One embodiment of the device includes a substrate having a layer of semiconductor material, a gate structure overlying the layer of semiconductor material, and source/drain recesses formed in the semiconductor material adjacent to the gate structure, such that remaining semiconductor material is located below the source/drain recesses. The device also includes shallow source/drain implant regions formed in the remaining semiconductor material, and epitaxially grown, in situ doped, semiconductor material in the source/drain recesses.
摘要:
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.
摘要:
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.
摘要:
Semiconductor devices and methods for fabricating semiconductor devices are provided. One exemplary method comprises providing a silicon-comprising substrate having a first surface, etching a recess into the first surface, the recess having a side surface and a bottom surface, implanting carbon ions into the side surface and the bottom surface, and forming an impurity-doped, silicon-comprising region overlying the side surface and the bottom surface.
摘要:
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.
摘要:
Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods are provided. Methods for fabricating a semiconductor device include providing a semiconductor substrate having an active region and a shallow trench isolation (STI) region. Epitaxial layer is formed on the active region to define a lateral overhang portion in a divot at the active region/STI region interface. A gate stack is formed having a first gate stack-forming layer overlying the semiconductor substrate. First gate stack-forming layer includes a non-conformal layer of metal gate-forming material which is directionally deposited to form a thinned break portion just below the lateral overhang portion. After the step of forming the gate stack, a first portion of the non-conformal layer is in the gate stack and a second portion is exposed. The thinned break portion at least partially isolates the first and second portions during subsequent etch chemistries.
摘要:
Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, etching recesses into the substrate using the gate electrode as an etch mask, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.
摘要:
The disclosed subject matter relates to semiconductor transistor devices and associated fabrication techniques that can be utilized to form silicide contacts having an increased effective size, relative to conventional silicide contacts. A semiconductor device fabricated in accordance with the processes disclosed herein includes a layer of semiconductor material and a gate structure overlying the layer of semiconductor material. A channel region is formed in the layer of semiconductor material, the channel region underlying the gate structure. The semiconductor device also includes source and drain regions in the layer of semiconductor material, wherein the channel region is located between the source and drain regions. Moreover, the semiconductor device includes facet-shaped silicide contact areas overlying the source and drain regions.
摘要:
Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, etching recesses into the substrate using the gate electrode as an etch mask, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.