发明申请
US20110204490A1 FILM FORMING APPARATUS, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE
有权
薄膜成型装置,薄膜成型方法和半导体装置
- 专利标题: FILM FORMING APPARATUS, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE
- 专利标题(中): 薄膜成型装置,薄膜成型方法和半导体装置
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申请号: US13048612申请日: 2011-03-15
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公开(公告)号: US20110204490A1公开(公告)日: 2011-08-25
- 发明人: Tsuyoshi SATO , Hiroyasu Kondo , Naoaki Sakurai , Katsuyuki Soeda , Kenichi Ooshiro , Shuichi Kimura
- 申请人: Tsuyoshi SATO , Hiroyasu Kondo , Naoaki Sakurai , Katsuyuki Soeda , Kenichi Ooshiro , Shuichi Kimura
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-284652 20081105
- 主分类号: H01L29/02
- IPC分类号: H01L29/02 ; B05C11/00 ; H01L21/31
摘要:
According one embodiment, a film forming apparatus includes a stage, a coating section, a vapor supply section, a blower section, and a controller. On the stage, an coating target is placed. The coating section applies a material to a predetermined region on the coating target placed on the stage to form a coating film. The vapor supply section generates solvent vapor capable of dissolving the coating film. The blower section blows the solvent vapor generated by the vapor supply section onto the coating film on the coating target placed on the stage. The controller controls an amount of the solvent vapor to be blown by the blower section so that: the coating film is dissolved; viscosity in a part of the coating film on a surface layer side is lower than that in a part thereof on the coating target side; and the viscosity in the part on the surface layer side and the viscosity of the coating target side take such values that prevent the coating film on the coating target from spreading.
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