发明申请
US20110205828A1 SEMICONDUCTOR MEMORY WITH MEMORY CELL PORTIONS HAVING DIFFERENT ACCESS SPEEDS
失效
具有存储器单元的半导体存储器具有不同的访问速度
- 专利标题： SEMICONDUCTOR MEMORY WITH MEMORY CELL PORTIONS HAVING DIFFERENT ACCESS SPEEDS
- 专利标题（中）： 具有存储器单元的半导体存储器具有不同的访问速度
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申请号： US12710800申请日： 2010-02-23
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公开(公告)号： US20110205828A1公开(公告)日： 2011-08-25
- 发明人: Michael Richter , Markus Balb , Christoph Bilger , Martin Brox , Peter Gregorius , Thomas Hein , Andreas Schneider
- 申请人： Michael Richter , Markus Balb , Christoph Bilger , Martin Brox , Peter Gregorius , Thomas Hein , Andreas Schneider
- 申请人地址： DE Munich
- 专利权人： QIMONDA AG
- 当前专利权人： QIMONDA AG
- 当前专利权人地址： DE Munich
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.