摘要:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
摘要:
A method of adjusting an interface voltage includes transferring data between a memory device and a controller, and detecting whether an error occurred in the transfer of data. An interface voltage of at least one of the memory device and the controller is adjusted based on the detection.
摘要:
A method of adjusting an interface voltage includes transferring data between a memory device and a controller, and detecting whether an error occurred in the transfer of data. An interface voltage of at least one of the memory device and the controller is adjusted based on the detection.
摘要:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
摘要:
A memory circuit comprises a D/A converter connected with an input/output circuit and with a writing circuit, wherein the D/A converter converts a digital data with at least two digital bits received from the input/output circuit to one analog value and forwards the analog value to the writing circuit, wherein the digital data is at least a part of a floating point number, wherein the writing circuit writes the analog value in at least one selected memory cell, and an A/D converter connected with a reading circuit and with the input/output circuit, wherein the reading circuit reads an analog value from a selected memory cell and forwards the analog value to the A/D converter, wherein the A/D converter converts the analog value to digital data, and wherein the A/D converter forwards the digital data to the input/output circuit. Furthermore, a method is provided for reading data from at least one memory cell of a memory, wherein an analog value is read from the memory cell and the analog value is corrected according to a correction factor representing a storage time the analog value was stored and wherein the corrected analog value is converted to digital data.
摘要:
A display having a screen, and memory for storing picture data is disclosed. In one embodiment, the screen includes a plurality of pixels, the pixels in a first mode of the display being controlled by the picture data stored in the memory, and in a second mode of the display being controlled by picture data received from an external processing unit.
摘要:
Methods and apparatus for storing data in different regions of the memory device based on, for example, a reliability requirement of the data. A memory controller may determine a category for data, for example, high reliability data and low reliability data, prior to storing the data in memory. The data may be stored in a region of memory associated with the category of data according to a method associated with the category of data. For example, high reliability data may be stored in a particular region of memory using lower clock frequencies, with additional error correction bits, and/or at multiple redundant locations. In contrast, low reliability data may be stored other regions of the memory using higher clock frequencies, without additional error correction bits and/or at singular locations (i.e., without redundant locations.
摘要:
A method of sending data on request from a memory to a device, wherein the memory receives a request from the device for sending predetermined data to the device, wherein the memory sends data and information about the data to the device.
摘要:
A memory circuit comprises a D/A converter connected with an input/output circuit and with a writing circuit, wherein the D/A converter converts a digital data with at least two digital bits received from the input/output circuit to one analog value and forwards the analog value to the writing circuit, wherein the digital data is at least a part of a floating point number, wherein the writing circuit writes the analog value in at least one selected memory cell, and an A/D converter connected with a reading circuit and with the input/output circuit, wherein the reading circuit reads an analog value from a selected memory cell and forwards the analog value to the A/D converter, wherein the A/D converter converts the analog value to digital data, and wherein the A/D converter forwards the digital data to the input/output circuit. Furthermore, a method is provided for reading data from at least one memory cell of a memory, wherein an analog value is read from the memory cell and the analog value is corrected according to a correction factor representing a storage time the analog value was stored and wherein the corrected analog value is converted to digital data.
摘要:
Method of controlling a driver strength and a termination impedance of a signal line of an interface, wherein the driver sends an output signal as an alternating voltage with a frequency, wherein the signal line is terminated with a termination impedance, wherein the driver strength is changed depending on a changing of the frequency of the output signal.