Invention Application
- Patent Title: Nonvolatile memory devices and method of manufacturing the same
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Application No.: US13064960Application Date: 2011-04-28
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Publication No.: US20110207265A1Publication Date: 2011-08-25
- Inventor: Yong-wook Kwon , Chul-soon Kwon , Young-cheon Jeong
- Applicant: Yong-wook Kwon , Chul-soon Kwon , Young-cheon Jeong
- Priority: KR10-2007-0010703 20070201
- Main IPC: H01L21/50
- IPC: H01L21/50
Abstract:
Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.
Information query
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