公开(公告)号：US20110207265A1

公开(公告)日：2011-08-25

申请号：US13064960

申请日：2011-04-28

Applicant: Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

Inventor： Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

IPC: H01L21/50

CPC classification number: H01L27/24 ,  G11C13/0004 ,  G11C2213/79

Abstract: Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

公开(公告)号：US07956343B2

公开(公告)日：2011-06-07

申请号：US12010921

申请日：2008-01-31

Applicant: Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

Inventor： Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

IPC: H01L47/00

CPC classification number: H01L27/24 ,  G11C13/0004 ,  G11C2213/79

Abstract: Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

Abstract translation: 示例性实施例提供了使用电阻元件的非易失性存储器件。 非易失性存储器件可以包括半导体衬底，半导体衬底上的多个可变电阻图案以及与可变电阻图案相平行并耦合到接地电压的多个散热器图案。

公开(公告)号：US20080185568A1

公开(公告)日：2008-08-07

申请号：US12010921

申请日：2008-01-31

Applicant: Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

Inventor： Yong-wook Kwon ,  Chul-soon Kwon ,  Young-cheon Jeong

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L27/24 ,  G11C13/0004 ,  G11C2213/79

Abstract: Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

Abstract translation: 示例性实施例提供了使用电阻元件的非易失性存储器件。 非易失性存储器件可以包括半导体衬底，半导体衬底上的多个可变电阻图案以及与可变电阻图案相平行并耦合到接地电压的多个散热器图案。