发明申请
US20110207306A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED ION IMPLANTATION PROCESS
审中-公开
使用改进的离子植入工艺制备半导体结构
- 专利标题： SEMICONDUCTOR STRUCTURE MADE USING IMPROVED ION IMPLANTATION PROCESS
- 专利标题（中）： 使用改进的离子植入工艺制备半导体结构
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申请号： US12709833申请日： 2010-02-22
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公开(公告)号： US20110207306A1公开(公告)日： 2011-08-25
- 发明人: Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
- 申请人： Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
Methods and apparatus for producing a semiconductor structure include: subjecting an implantation surface of a semiconductor wafer to an ion implantation process to create an exfoliation layer therein, wherein the ion implantation process includes simultaneously implanting two different species of ions into the implantation surface of the semiconductor wafer.
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