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    MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR SUBSTRATE
    2.
    发明申请
    MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR SUBSTRATE 有权
    薄膜半导体基板的制造方法

    公开(公告)号：US20120077331A1

    公开(公告)日：2012-03-29

    申请号：US13225039

    申请日：2011-09-02

    申请人： Toshiyuki SAMESHIMA ,  Yutaka Inouchi ,  Takeshi Matsumoto ,  Yuko Fujimoto

    发明人： Toshiyuki SAMESHIMA ,  Yutaka Inouchi ,  Takeshi Matsumoto ,  Yuko Fujimoto

    IPC分类号： H01L21/304

    CPC分类号： H01L21/268 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/76254

    摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.

    摘要翻译： 薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底 沿着气泡层在绝缘基板的一侧形成半导体薄膜。 在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。 通过使用例如光束来进行半导体衬底的加热。

    Manufacturing method of thin film semiconductor substrate
    3.
    发明授权
    Manufacturing method of thin film semiconductor substrate 有权
    薄膜半导体衬底的制造方法

    公开(公告)号：US08258043B2

    公开(公告)日：2012-09-04

    申请号：US13225039

    申请日：2011-09-02

    申请人： Toshiyuki Sameshima ,  Yutaka Inouchi ,  Takeshi Matsumoto ,  Yuko Fujimoto

    发明人： Toshiyuki Sameshima ,  Yutaka Inouchi ,  Takeshi Matsumoto ,  Yuko Fujimoto

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/268 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/76254

    摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.

    摘要翻译： 薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底 沿着气泡层在绝缘基板的一侧形成半导体薄膜。 在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。 通过使用例如光束来进行半导体衬底的加热。

    Crystal resonator and crystal oscillator
    4.
    发明授权
    Crystal resonator and crystal oscillator 有权
    水晶谐振器和晶振

    公开(公告)号：US08830004B2

    公开(公告)日：2014-09-09

    申请号：US13559601

    申请日：2012-07-27

    申请人： Mitsuaki Koyama ,  Toshihiko Kagami ,  Takeshi Matsumoto ,  Takeru Mutoh ,  Manabu Ishikawa ,  Shinichi Sato

    发明人： Mitsuaki Koyama ,  Toshihiko Kagami ,  Takeshi Matsumoto ,  Takeru Mutoh ,  Manabu Ishikawa ,  Shinichi Sato

    IPC分类号： H03H9/19 ,  G01N5/02 ,  H03H3/02 ,  H03H9/02

    CPC分类号： H03H3/02 ,  H03H9/02 ,  H03H9/02086 ,  H03H9/542 ,  H03H9/566 ,  H03L1/023 ,  H03L1/028

    摘要： A crystal resonator comprises a first vibrating region provided on a crystal wafer, a second vibrating region provided on the crystal wafer, the second vibrating region having a different thickness and positive/negative orientation of the X-axis from those of the first vibrating region, and excitation electrodes which are provided respectively on the first vibrating region and the second vibrating region for causing the vibrating regions to vibrate independently. Frequencies that change by different amounts from each other relative to a temperature change can be retrieved from one vibrating region and the other vibrating region. Thus, based on an oscillating frequency of the vibrating region in which a clear frequency change occurs relative to the temperature, the oscillating frequency of the other vibrating region can be controlled. Thereby, increases in the complexity of the crystal oscillator can be suppressed.

    摘要翻译： 晶体谐振器包括设置在晶体晶片上的第一振动区域，设置在晶体晶片上的第二振动区域，第二振动区域具有与第一振动区域不同的X轴的厚度和正/负取向， 以及分别设置在第一振动区域和第二振动区域上用于使振动区域独立振动的激励电极。 可以从一个振动区域和另一个振动区域检索相对于温度变化彼此变化的频率。 因此，基于相对于温度发生明显的频率变化的振动区域的振荡频率，可以控制另一个振动区域的振荡频率。 由此，可以抑制晶体振荡器的复杂性的增加。

    Optical semiconductor device and method for fabricating the optical semiconductor device
    5.
    发明授权
    Optical semiconductor device and method for fabricating the optical semiconductor device 有权
    光半导体装置及其制造方法

    公开(公告)号：US08824842B2

    公开(公告)日：2014-09-02

    申请号：US13043277

    申请日：2011-03-08

    申请人： Takeshi Matsumoto

    发明人： Takeshi Matsumoto

    IPC分类号： G02B6/34 ,  H01L33/00 ,  G02B6/12 ,  H01S5/22 ,  G02B6/124 ,  H01L21/02 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/32 ,  H01S5/34

    CPC分类号： H01S5/0268 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/124 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02639 ,  H01S5/1218 ,  H01S5/1231 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3412 ,  H01S2304/04

    摘要： An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.

    摘要翻译： 一种光学半导体器件，包括：多个第一衍射光栅层，沿着第一半导体层上的第一方向彼此间隔设置，多个第一衍射光栅中的每一个的第一方向的下表面的长度比第一方向长 第一衍射光栅的上表面的长度; 第二衍射光栅层，沿着第一方向上的第一方向设置，第一和第二衍射光栅层以彼此间隔交替地设置，第二衍射光栅层的沿第一方向的上表面的长度比第一方向的长度长 第二衍射层的下表面; 包括第一和第二衍射光栅层的衍射光栅; 第二半导体层，设置在第一和第二衍射光栅层之间并位于第二衍射光栅层之下; 以及设置在第一和第二衍射光栅层上的第三半导体层。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    6.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20110206486A1

    公开(公告)日：2011-08-25

    申请号：US12971171

    申请日：2010-12-17

    申请人： Kenichirou MATSUYAMA ,  Takeshi Matsumoto

    发明人： Kenichirou MATSUYAMA ,  Takeshi Matsumoto

    IPC分类号： H01L21/67

    CPC分类号： H01L21/67225 ,  H01L21/67196

    摘要： Even when a module constituting a multi-module becomes an unavailable module, transfer of substrates can be promptly performed, while restricting generation of inferior products. When a destination module of a multi-module becomes unavailable before a substrate is transferred to the destination module, a destination of the substrate is changed to a module to which a substrate subsequent to the substrate is to be loaded. Upon generation of an unavailable module, before the transfer unit accesses the module on an upstream end of the transfer cycle, the transfer cycle proceeds until a precedent substrate becomes ready to be unloaded from the changed destination module. Alternatively, upon generation of an unavailable module, when the transfer unit is located on an upstream side of the unavailable module in the transfer cycle, the transfer operation of the transfer unit is made standby until a precedent substrate becomes ready to be unloaded in the changed destination module.

    摘要翻译： 即使构成多模块的模块成为不可用模块，也可以迅速地进行基板的转印，同时限制劣质产品的产生。 当在将基板传送到目的地模块之前，多模块的目的地模块变得不可用时，将基板的目的地改变为要在基板之后的基板被加载到的模块。 在生成不可用模块之前，在传送单元在传送周期的上游端访问模块之前，传送周期继续进行，直到先前的基板准备好从改变的目的地模块卸载。 或者，当生成不可用模块时，当传送单元位于传送周期中的不可用模块的上游侧时，传送单元的传送操作被备用直到先前的基板准备好在改变后的装载中被卸载 目的地模块。

    Wavelength displacement correcting system
    8.
    发明授权
    Wavelength displacement correcting system 有权
    波长位移校正系统

    公开(公告)号：US07705983B2

    公开(公告)日：2010-04-27

    申请号：US12020797

    申请日：2008-01-28

    申请人： Kenji Imura ,  Takeshi Matsumoto

    发明人： Kenji Imura ,  Takeshi Matsumoto

    IPC分类号： G01J3/28

    CPC分类号： G01J3/18 ,  G01J3/02 ,  G01J3/027 ,  G01J3/28 ,  G01J3/2803 ,  G01J2003/2866

    摘要： A wavelength displacement correcting system and method where a monochromatic beam from an LED is incident through an incident slit of a spectral device and is diffracted on a diffraction grating to form a dispersed light image. Information relating to the dispersed light image is outputted and a wavelength displacement is calculated, using a forward voltage value corresponding to the constant current, and a forward voltage initial value. Wavelength displacement amounts of at least two diffracted beams are calculated, using output values of the at least two diffracted beams, and diffracted beam output initial values with respect to the dispersed light image. A dispersion width is calculated, using the calculated wavelength displacement amount of the beam, and the calculated wavelength displacement amounts of at least two diffracted beams.

    摘要翻译： 一种波长位移校正系统和方法，其中来自LED的单色光束通过光谱器件的入射狭缝入射并衍射在衍射光栅上以形成分散的光图像。 输出与分散的光图像相关的信息，并且使用与恒定电流对应的正向电压值和正向电压初始值来计算波长位移。 使用至少两个衍射光束的输出值和相对于分散光图像的衍射光束输出初始值来计算至少两个衍射光束的波长位移量。 使用计算出的波束位移量和至少两个衍射光束的计算波长位移量来计算色散宽度。