发明申请
- 专利标题: Semiconductor Device and Its Manufacturing Method
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12980675申请日: 2010-12-29
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公开(公告)号: US20110215401A1公开(公告)日: 2011-09-08
- 发明人: Kenji MIYAKOSHI , Shinichiro Wada , Yohei Yanagida , Takayuki Oshima , Keigo Kitazawa
- 申请人: Kenji MIYAKOSHI , Shinichiro Wada , Yohei Yanagida , Takayuki Oshima , Keigo Kitazawa
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-044861 20100302
- 主分类号: H01L29/772
- IPC分类号: H01L29/772 ; H01L21/336
摘要:
In an LDMOS transistor, a channel length is reduced to increase a saturation current without causing an off-state breakdown voltage optimized in terms of trade-off between an on-resistance and the off-state breakdown voltage. A short channel region is selectively formed between an element isolation film and a low-concentration body region in which a channel is formed such that the short channel region is located immediately below a gate oxide film. The short channel region has a conduction type opposite to that of the low-concentration body region and has a carrier concentration higher than that of the low-concentration body region. The body region is retreated by the presence of the short channel region toward a high-concentration source region.
公开/授权文献
- US08841724B2 Semiconductor device and its manufacturing method 公开/授权日:2014-09-23