发明申请
- 专利标题: COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 化合物半导体发光器件及其制造方法
-
申请号: US13114113申请日: 2011-05-24
-
公开(公告)号: US20110220872A1公开(公告)日: 2011-09-15
- 发明人: Naoki FUKUNAGA , Hironao SHINOHARA
- 申请人: Naoki FUKUNAGA , Hironao SHINOHARA
- 申请人地址: JP Tokyo
- 专利权人: SHOWA DENKO K.K.
- 当前专利权人: SHOWA DENKO K.K.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-333582 20061211
- 主分类号: H01L33/06
- IPC分类号: H01L33/06
摘要:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
信息查询
IPC分类: