发明申请
US20110220872A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
化合物半导体发光器件及其制造方法

  • 专利标题: COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 化合物半导体发光器件及其制造方法
  • 申请号: US13114113
    申请日: 2011-05-24
  • 公开(公告)号: US20110220872A1
    公开(公告)日: 2011-09-15
  • 发明人: Naoki FUKUNAGAHironao SHINOHARA
  • 申请人: Naoki FUKUNAGAHironao SHINOHARA
  • 申请人地址: JP Tokyo
  • 专利权人: SHOWA DENKO K.K.
  • 当前专利权人: SHOWA DENKO K.K.
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2006-333582 20061211
  • 主分类号: H01L33/06
  • IPC分类号: H01L33/06
COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
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