发明申请
- 专利标题： Semiconductor Device and Method of Forming Repassivation Layer with Reduced Opening to Contact Pad of Semiconductor Die
- 专利标题（中）： 半导体器件和半导体芯片接触焊盘开放复位再生层的方法
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申请号： US12724367申请日： 2010-03-15
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公开(公告)号： US20110221055A1公开(公告)日： 2011-09-15
- 发明人: Yaojian Lin , Kang Chen , Jianmin Fang , Xia Feng
- 申请人： Yaojian Lin , Kang Chen , Jianmin Fang , Xia Feng
- 申请人地址： SG Singapore
- 专利权人： STATS CHIPPAC, LTD.
- 当前专利权人： STATS CHIPPAC, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/78 ; H01L21/60 ; H01L21/56 ; H01L23/31
摘要：
A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.
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