公开(公告)号：USD984968S1

公开(公告)日：2023-05-02

申请号：US29863875

申请日：2022-12-23

申请人： Kang Chen

设计人： Kang Chen

公开(公告)号：USD957731S1

公开(公告)日：2022-07-12

申请号：US29796586

申请日：2021-06-25

申请人： Kang Chen

设计人： Kang Chen

公开(公告)号：US11144097B1

公开(公告)日：2021-10-12

申请号：US16898443

申请日：2020-06-11

申请人： Zung-Ting Hu ,  Wen-Hsien Chin ,  Hsuan-Liang Lin ,  Yen-Kang Chen ,  Jia-Wen Chen ,  Cheng-Min Chen ,  Tze-Chiang Cheng

发明人： Zung-Ting Hu ,  Wen-Hsien Chin ,  Hsuan-Liang Lin ,  Yen-Kang Chen ,  Jia-Wen Chen ,  Cheng-Min Chen ,  Tze-Chiang Cheng

IPC分类号： G06F1/16

摘要： An all-in-one computer including a main body and an electronic assembly is provided. The main body includes a first casing part and a second casing part. The second casing part is movably connected to the first casing part and configured to move between a first position and a second position in relative to the first casing part, and the first casing part has an engaging portion and an electrical connection portion. The electronic assembly is disposed in the second casing part. When the second casing part is located at the first position, the second casing part is engaged with the engaging portion and the electronic assembly is connected to the electrical connection portion, and when the second casing part is located at the second position, the second casing part is departed from the engaging portion and the electronic assembly is departed from the electrical connection portion.

公开(公告)号：US11144089B1

公开(公告)日：2021-10-12

申请号：US16904587

申请日：2020-06-18

申请人： Zung-Ting Hu ,  Hsuan-Liang Lin ,  Wen-Hsien Chin ,  Yen-Kang Chen ,  Jia-Wen Chen ,  Cheng-Min Chen ,  Tze-Chiang Cheng

发明人： Zung-Ting Hu ,  Hsuan-Liang Lin ,  Wen-Hsien Chin ,  Yen-Kang Chen ,  Jia-Wen Chen ,  Cheng-Min Chen ,  Tze-Chiang Cheng

IPC分类号： G06F1/16 ,  H05K5/02 ,  H05K5/00

摘要： An electronic device including a main body, a frame and a display is provided. The frame is pivotally connected to the main body. The display is detachably assembled to the frame and configured to rotate between a first state and a second state in relative to the main body with the frame. When the display is rotated in relative to the main body to the first state, the display closes the main body. When the display is rotated in relative to the main body to the second state, the display is departed from the main body, so as to be detached from the main body and the frame.

公开(公告)号：USD914014S1

公开(公告)日：2021-03-23

申请号：US29672482

申请日：2018-12-06

申请人： I-Hsuan Tsai ,  Yen-Kang Chen

设计人： I-Hsuan Tsai ,  Yen-Kang Chen

公开(公告)号：US08791008B2

公开(公告)日：2014-07-29

申请号：US13426552

申请日：2012-03-21

申请人： Yaojian Lin ,  Kang Chen

发明人： Yaojian Lin ,  Kang Chen

IPC分类号： H01L21/44

CPC分类号： H01L23/562 ,  H01L21/561 ,  H01L23/3157 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02125 ,  H01L2224/02165 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/014

摘要： A semiconductor device has a semiconductor die and first insulating layer formed over the semiconductor die. A plurality of first micro-vias can be formed in the first insulating layer. A conductive layer is formed in the first micro-openings and over the first insulating layer. A second insulating layer is formed over the first insulating layer and conductive layer. A portion of the second insulating layer is removed to expose the conductive layer and form a plurality of second micro-openings in the second insulating layer over the conductive layer. The second micro-openings can be micro-vias, micro-via ring, or micro-via slots. Removing the portion of the second insulating layer leaves an island of the second insulating layer over the conductive layer. A bump is formed over the conductive layer. A third insulating layer is formed in the second micro-openings over the bump. The second micro-openings provide stress relief.

摘要翻译： 半导体器件具有形成在半导体管芯上的半导体管芯和第一绝缘层。 可以在第一绝缘层中形成多个第一微通孔。 导电层形成在第一微孔中并在第一绝缘层之上。 在第一绝缘层和导电层上形成第二绝缘层。 去除第二绝缘层的一部分以暴露导电层并在导电层上的第二绝缘层中形成多个第二微孔。 第二微孔可以是微通孔，微通孔环或微通孔。 去除第二绝缘层的部分在导电层上留下第二绝缘层的岛。 在导电层上形成凸点。 在凸起上的第二微孔中形成第三绝缘层。 第二个微孔提供应力消除。

公开(公告)号：US08658707B2

公开(公告)日：2014-02-25

申请号：US12886817

申请日：2010-09-21

申请人： Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

发明人： Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

IPC分类号： C08J9/16 ,  C08F214/26 ,  C08F228/02 ,  C08F220/50 ,  C08F220/28

CPC分类号： A61L31/041 ,  A61L31/048 ,  A61L31/16 ,  B01D67/0093 ,  B01D71/32 ,  B01J39/18 ,  B29C55/005 ,  B29K2027/18 ,  B29K2105/04 ,  B29K2995/0092 ,  C08F14/26 ,  C08F214/26 ,  C08F214/262 ,  C08F214/265 ,  C08F220/28 ,  C08F220/50 ,  C08F228/02 ,  C08J5/2237 ,  C08J9/28 ,  C08J9/35 ,  C08J2201/0502 ,  C08J2327/18 ,  C08L27/18 ,  C08L2205/02 ,  Y10T428/31544 ,  C08L2666/04 ,  C08F2/22

摘要： A functional TFE copolymer fine powder is described, wherein the TFE copolymer is a polymer of TFE and at least one functional comonomer, and wherein the TFE copolymer has functional groups that are pendant to the polymer chain. The functional TFE copolymer fine powder resin is paste extrudable and expandable. Methods for making the functional TFE copolymer are also described. The expanded functional TFE copolymer material may be post-reacted after expansion.

摘要翻译： 描述了一种功能性TFE共聚物细粉末，其中TFE共聚物是TFE和至少一种官能共聚单体的聚合物，并且其中TFE共聚物具有垂直于聚合物链的官能团。 功能性TFE共聚物细粉末树脂是可挤出和可膨胀的糊状物。 还描述了制备功能性TFE共聚物的方法。 膨胀的功能性TFE共聚物材料可以在膨胀后进行后反应。

公开(公告)号：US08648470B2

公开(公告)日：2014-02-11

申请号：US13326157

申请日：2011-12-14

申请人： Yaojian Lin ,  Jose Alvin Caparas ,  Kang Chen ,  Hin Hwa Goh

发明人： Yaojian Lin ,  Jose Alvin Caparas ,  Kang Chen ,  Hin Hwa Goh

IPC分类号： H01L23/538

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/00 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73259 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

摘要： A semiconductor device has a first semiconductor die including TSVs mounted to a carrier with a thermally releasable layer. A first encapsulant having a first coefficient of thermal expansion CTE is deposited over the first semiconductor die. The first encapsulant includes an elevated portion in a periphery of the first encapsulant that reduces warpage. A surface of the TSVs is exposed. A second semiconductor die is mounted to the surface of the TSVs and forms a gap between the first and second semiconductor die. A second encapsulant having a second CTE is deposited over the first and second semiconductor die and within the gap. The first CTE is greater than the second CTE. In one embodiment, the first and second encapsulants are formed in a chase mold. An interconnect structure is formed over the first and second semiconductor die.

摘要翻译： 半导体器件具有第一半导体管芯，其包括安装在具有热可释放层的载体上的TSV。 具有第一热膨胀系数CTE的第一密封剂沉积在第一半导体管芯上。 第一密封剂包括第一密封剂的周边中的升高部分，其减少翘曲。 暴露TSV的表面。 第二半导体管芯安装到TSV的表面，并在第一和第二半导体管芯之间形成间隙。 具有第二CTE的第二密封剂沉积在第一和第二半导体管芯上并且在间隙内。 第一个CTE大于第二个CTE。 在一个实施例中，第一和第二密封剂形成在追逐模具中。 在第一和第二半导体管芯上形成互连结构。

公开(公告)号：US08642446B2

公开(公告)日：2014-02-04

申请号：US12891232

申请日：2010-09-27

申请人： Yaojian Lin ,  Xia Feng ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Xia Feng ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L21/00

CPC分类号： H01L23/562 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/02311 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. A contact pad is formed over an active surface of the semiconductor die. A protective pattern is formed over the active surface of the semiconductor die between the contact pad and saw street of the semiconductor die. The protective pattern includes a segmented metal layer or plurality of parallel segmented metal layers. An insulating layer is formed over the active surface, contact pad, and protective pattern. A portion of the insulating layer is removed to expose the contact pad. The protective pattern reduces erosion of the insulating layer between the contact pad and saw street of the semiconductor die. The protective pattern can be angled at corners of the semiconductor die or follow a contour of the contact pad. The protective pattern can be formed at corners of the semiconductor die.

摘要翻译： 半导体晶片包含由锯条分隔开的多个半导体管芯。 在半导体管芯的有效表面上形成接触焊盘。 在半导体管芯的接触焊盘和锯条之间的半导体管芯的有源表面上形成保护图案。 保护图案包括分段金属层或多个平行的分段金属层。 在有源表面，接触焊盘和保护图案之上形成绝缘层。 去除绝缘层的一部分以露出接触垫。 保护图案减少了半导体管芯的接触焊盘和锯
路之间的绝缘层的侵蚀。 保护图案可以在半导体管芯的拐角处成角度，或者遵循接触焊盘的轮廓。 保护图案可以形成在半导体管芯的拐角处。

公开(公告)号：US20130249106A1

公开(公告)日：2013-09-26

申请号：US13428439

申请日：2012-03-23

申请人： Yaojian Lin ,  Kang Chen ,  Yu Gu

发明人： Yaojian Lin ,  Kang Chen ,  Yu Gu

IPC分类号： H01L23/538 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L21/568 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/19 ,  H01L2924/00012 ,  H01L2224/03

摘要： A semiconductor device has a semiconductor die. An encapsulant is deposited around the semiconductor die. An interconnect structure having a conductive bump is formed over the encapsulant and semiconductor die. A mechanical support layer is formed over the interconnect structure and around the conductive bump. The mechanical support layer is formed over a corner of the semiconductor die and over a corner of the interconnect structure. An opening is formed through the encapsulant that extends to the interconnect structure. A conductive material is deposited within the opening to form a conductive through encapsulant via (TEV) that is electrically connected to the interconnect structure. A semiconductor device is mounted to the TEV and over the semiconductor die to form a package-on-package (PoP) device. A warpage balance layer is formed over the encapsulant opposite the interconnect structure.

摘要翻译： 半导体器件具有半导体管芯。 围绕半导体管芯沉积密封剂。 具有导电凸块的互连结构形成在密封剂和半导体管芯上。 机械支撑层形成在互连结构上并且围绕导电凸块。 机械支撑层形成在半导体管芯的拐角上并且在互连结构的拐角上。 通过延伸到互连结构的密封剂形成开口。 导电材料沉积在开口内以形成导电的通过密封剂通过（TEV）电连接到互连结构。 将半导体器件安装到TEV并在半导体管芯上方形成封装封装（PoP）器件。 在与互连结构相对的密封剂上形成翘曲平衡层。