发明申请
US20110222355A1 Control voltage generation circuit and nonvolatile storage device having the same
审中-公开
控制电压产生电路和具有该电压产生电路的非易失性存储装置
- 专利标题: Control voltage generation circuit and nonvolatile storage device having the same
- 专利标题(中): 控制电压产生电路和具有该电压产生电路的非易失性存储装置
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申请号: US13064009申请日: 2011-03-02
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公开(公告)号: US20110222355A1公开(公告)日: 2011-09-15
- 发明人: Chieko Nakashima , Tomohiro Namise , Tsunenori Shiimoto
- 申请人: Chieko Nakashima , Tomohiro Namise , Tsunenori Shiimoto
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2010-054199 20100311; JPP2010-259714 20101122
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; H03L5/00
摘要:
Disclosed herein is a control voltage generation circuit including: a reference voltage generation circuit adapted to generate a reference voltage; and a voltage conversion circuit adapted to generate, based on the reference voltage, a control voltage to be supplied to the gate of a clamping transistor connected between a bit line and a sense amplifier to adjust the voltage of the bit line, wherein the voltage conversion circuit outputs a voltage, which is the sum of a voltage proportional to the reference voltage and a voltage equivalent to the threshold voltage of the clamping transistor, to the gate of the clamping transistor as the control voltage.
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