发明申请
- 专利标题： Reducing Resistance in Source and Drain Regions of FinFETs
- 专利标题（中）： 降低FinFET源极和漏极区域的电阻
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申请号： US13103594申请日： 2011-05-09
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公开(公告)号： US20110223735A1公开(公告)日： 2011-09-15
- 发明人: CHEN-HUA YU , YU-RUNG HSU , CHEN-NAN YEH , CHENG-HUNG CHANG
- 申请人： CHEN-HUA YU , YU-RUNG HSU , CHEN-NAN YEH , CHENG-HUNG CHANG
- 申请人地址： TW HSIN-CHU
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW HSIN-CHU
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.
公开/授权文献
- US08617948B2 Reducing resistance in source and drain regions of FinFETs 公开/授权日：2013-12-31
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