发明申请
- 专利标题： Low-k Cu Barriers in Damascene Interconnect Structures
- 专利标题（中）： 大马士革互连结构中的低k铜屏障
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申请号： US12724229申请日： 2010-03-15
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公开(公告)号： US20110223759A1公开(公告)日： 2011-09-15
- 发明人: Kuan-Chen Wang , Po-Cheng Shih , Chung-Chi Ko , Keng-Chu Lin , Shwang-Ming Jeng
- 申请人： Kuan-Chen Wang , Po-Cheng Shih , Chung-Chi Ko , Keng-Chu Lin , Shwang-Ming Jeng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO2). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
公开/授权文献
- US08993435B2 Low-k Cu barriers in damascene interconnect structures 公开/授权日：2015-03-31
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