发明申请
- 专利标题： Memristor Having a Triangular Shaped Electrode
- 专利标题（中）： 具有三角形电极的忆阻器
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申请号： US13130827申请日： 2009-01-13
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公开(公告)号： US20110227030A1公开(公告)日： 2011-09-22
- 发明人: Matthew D. Pickett , Julien Borghetti
- 申请人： Matthew D. Pickett , Julien Borghetti
- 国际申请： PCT/US2009/030827 WO 20090113
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.
公开/授权文献
- US08431921B2 Memristor having a triangular shaped electrode 公开/授权日：2013-04-30
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