发明申请
- 专利标题： INTEGRATION OF A SENSE FET INTO A DISCRETE POWER MOSFET
- 专利标题（中）： 将感测FET集成到分立功率MOSFET中
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申请号： US13149051申请日： 2011-05-31
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公开(公告)号： US20110227155A1公开(公告)日： 2011-09-22
- 发明人: Yi Su , Anup Bhalla , Daniel Ng
- 申请人： Yi Su , Anup Bhalla , Daniel Ng
- 申请人地址： BM Hamilton
- 专利权人： ALPHA & OMEGA SEMICONDUCTOR, LTD.
- 当前专利权人： ALPHA & OMEGA SEMICONDUCTOR, LTD.
- 当前专利权人地址： BM Hamilton
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A main FET and one or more sense FETs are formed in a common substrate. The main FET and sense FET(s) include a source terminal, a gate terminal and a drain terminal. The common gate pad connects the gate terminals of the main FET and sense FET(s). An electrical isolation may be between the gate terminals of the main FET and the sense FET(s). A sense pad in electrical contact with the source of the one or more sense FETs does not overlap an area of the device containing the sense FET(s). It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
公开/授权文献
- US08304315B2 Integration of a sense FET into a discrete power MOSFET 公开/授权日：2012-11-06
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