发明申请
- 专利标题： Under-Bump Metallization Structure for Semiconductor Devices
- 专利标题（中）： 半导体器件欠冲击金属化结构
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申请号： US12725322申请日： 2010-03-16
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公开(公告)号： US20110227216A1公开(公告)日： 2011-09-22
- 发明人: Ming-Hung Tseng , Chen-Shien Chen , Chen-Cheng Kuo , Chih-Hua Chen , Ching-Wen Hsiao
- 申请人： Ming-Hung Tseng , Chen-Shien Chen , Chen-Cheng Kuo , Chih-Hua Chen , Ching-Wen Hsiao
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/60
摘要：
An under-bump metallization (UBM) structure for a semiconductor device is provided. A passivation layer is formed over a contact pad such that at least a portion of the contact pad is exposed. A protective layer, such as a polyimide layer, may be formed over the passivation layer. The UBM structure, such as a conductive pillar, is formed over the underlying contact pad such that the underlying contact pad extends laterally past the UBM structure by a distance large enough to prevent or reduce cracking of the passivation layer and or protective layer.
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