发明申请
- 专利标题： CRENULATED WIRING STRUCTURE AND METHOD FOR INTEGRATED CIRCUIT INTERCONNECTS
- 专利标题（中）： 用于集成电路互连的成形接线结构和方法
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申请号： US12724903申请日： 2010-03-16
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公开(公告)号： US20110227232A1公开(公告)日： 2011-09-22
- 发明人: Griselda Bonilla , Elbert E. Huang , Satyanarayana V. Nitta , Shom Ponoth
- 申请人： Griselda Bonilla , Elbert E. Huang , Satyanarayana V. Nitta , Shom Ponoth
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/768
摘要：
A method for forming crenulated conductors and a device having crenulated conductors includes forming a hardmask layer on a dielectric layer, and patterning the hardmask layer. Trenches are etched in the dielectric layer using the hardmask layer such that the trenches have shallower portions and deeper portions alternating along a length of the trench. A conductor is deposited in the trenches such that crenulated conductive lines are formed having different depths periodically disposed along the length of the conductive line.
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