A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; forming at least one film selected from the group consisting of a hard carbon film, a diamond film, a tantalum film, and a tantalum carbide film on the backside surface of the seed crystal; and growing the crystal on the frontside surface of the seed crystal.