发明申请
- 专利标题: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
- 专利标题(中): 基板处理装置和基板处理方法
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申请号: US13052512申请日: 2011-03-21
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公开(公告)号: US20110233198A1公开(公告)日: 2011-09-29
- 发明人: Masahisa OKUNO , Atsushi UMEKAWA
- 申请人: Masahisa OKUNO , Atsushi UMEKAWA
- 申请人地址: JP Tokyo
- 专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-069214 20100325
- 主分类号: H05B6/10
- IPC分类号: H05B6/10
摘要:
A substrate processing apparatus and a substrate processing method capable of supplying uniform electromagnetic wave power and performing uniform heating are provided. The substrate processing apparatus includes a process chamber for processing a wafer, a boat installed in the process chamber to hold the wafer, a gas introduction part installed below the wafer held by the boat for introducing a gas toward a back surface of the wafer, and a waveguide port installed over the wafer held by the boat for introducing an electromagnetic wave.
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