发明申请
US20110233667A1 DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH AND THREE OR FOUR MASKS PROCESS
有权
具有通道停止通道和三个或四个屏蔽过程的双栅氧化物晶体管
- 专利标题： DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH AND THREE OR FOUR MASKS PROCESS
- 专利标题（中）： 具有通道停止通道和三个或四个屏蔽过程的双栅氧化物晶体管
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申请号： US12782573申请日： 2010-05-18
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公开(公告)号： US20110233667A1公开(公告)日： 2011-09-29
- 发明人: Sung-Shan Tai , Sik Lui , Xiaobin Wang
- 申请人： Sung-Shan Tai , Sik Lui , Xiaobin Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L27/088
摘要：
A semiconductor device and fabrication methods are disclosed. The device includes a plurality of gate electrodes formed in trenches located in an active region of a semiconductor substrate. A first gate runner is formed in the substrate and electrically connected to the gate electrodes, wherein the first gate runner surrounds the active region. A second gate runner is connected to the first gate runner and located between the active region and a termination region. A termination structure surrounds the first and second gate runners and the active region. The termination structure includes a conductive material in an insulator-lined trench in the substrate, wherein the termination structure is electrically shorted to a source or body layer of the substrate thereby forming a channel stop for the device.
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