发明申请
- 专利标题： MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE
- 专利标题（中）： 磁记忆元件和磁记忆装置
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申请号： US13073552申请日： 2011-03-28
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公开(公告)号： US20110233699A1公开(公告)日： 2011-09-29
- 发明人: Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
- 申请人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JPJP2010-075349 20100329
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
公开/授权文献
- US08362581B2 Magnetic memory element and magnetic memory device 公开/授权日：2013-01-29