发明申请
- 专利标题: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 非易失性半导体存储器件
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申请号: US13052214申请日: 2011-03-21
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公开(公告)号: US20110235401A1公开(公告)日: 2011-09-29
- 发明人: Tetsuji KUNITAKE , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
- 申请人: Tetsuji KUNITAKE , Takashi Shigeoka , Takayuki Tsukamoto , Hironori Wakai , Hisashi Kato
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-066429 20100323
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H05K13/00
摘要:
A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.
公开/授权文献
- US08576606B2 Nonvolatile semiconductor memory device 公开/授权日:2013-11-05