发明申请
- 专利标题： METHODS OF FABRICATING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13070051申请日： 2011-03-23
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公开(公告)号： US20110237063A1公开(公告)日： 2011-09-29
- 发明人: Eungon KIM , Moonhan Park , Kwangyul Lee , CheolWoo Park , Sang Min Lee
- 申请人： Eungon KIM , Moonhan Park , Kwangyul Lee , CheolWoo Park , Sang Min Lee
- 优先权： KR10-2010-0026430 20100324
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213
摘要：
A method of fabricating a semiconductor device includes forming a gate dielectric layer and a first gate layer sequentially on an overall surface of a substrate including a first region and a second region, forming a lanthanum-oxide (La2O3) mask pattern on the first gate layer disposed on the second region, and selectively removing the first gate layer disposed on the first region by etching using the La2O3 mask pattern as a mask, thereby forming a first gate layer pattern on the second region.
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