公开(公告)号：US09502406B1

公开(公告)日：2016-11-22

申请号：US14838999

申请日：2015-08-28

申请人： Cheolwoo Park ,  Kwangyul Lee ,  Jeongeon Lee ,  Seokjun Won ,  Hyungsuk Jung

发明人： Cheolwoo Park ,  Kwangyul Lee ,  Jeongeon Lee ,  Seokjun Won ,  Hyungsuk Jung

IPC分类号： H01L27/088 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L27/088 ,  H01L21/02063 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66575

摘要： Provided is a semiconductor device and method of fabricating the same. The device includes a substrate including a first region and a second region, a first gate pattern on the first region, a second gate pattern on the second region, and an interlayer insulating layer enclosing the first and second gate patterns. The first gate pattern including a first gate insulating layer and a first gate electrode, the second gate pattern including a second gate insulating layer and a second gate electrode, the first gate insulating layer is thicker than the second gate insulating layer, and a top width of the second gate pattern is larger than a bottom width thereof.

公开(公告)号：US20110237063A1

公开(公告)日：2011-09-29

申请号：US13070051

申请日：2011-03-23

申请人： Eungon KIM ,  Moonhan Park ,  Kwangyul Lee ,  CheolWoo Park ,  Sang Min Lee

发明人： Eungon KIM ,  Moonhan Park ,  Kwangyul Lee ,  CheolWoo Park ,  Sang Min Lee

IPC分类号： H01L21/3213

CPC分类号： H01L21/32139 ,  H01L21/32134 ,  H01L21/823842 ,  H01L21/823857

摘要： A method of fabricating a semiconductor device includes forming a gate dielectric layer and a first gate layer sequentially on an overall surface of a substrate including a first region and a second region, forming a lanthanum-oxide (La2O3) mask pattern on the first gate layer disposed on the second region, and selectively removing the first gate layer disposed on the first region by etching using the La2O3 mask pattern as a mask, thereby forming a first gate layer pattern on the second region.

摘要翻译： 一种制造半导体器件的方法包括在包括第一区域和第二区域的衬底的整个表面上顺序地形成栅极介电层和第一栅极层，在第一栅极层上形成氧化镧（La2O3）掩模图案 设置在第二区域上，并且通过使用La 2 O 3掩模图案作为掩模通过蚀刻来选择性地去除设置在第一区域上的第一栅极层，从而在第二区域上形成第一栅极层图案。