Invention Application
US20110241129A1 TRANSISTOR, SEMICONDUCTOR DEVICE AND TRANSISTOR FABRICATION PROCESS
审中-公开
晶体管，半导体器件和晶体管制造工艺
- Patent Title: TRANSISTOR, SEMICONDUCTOR DEVICE AND TRANSISTOR FABRICATION PROCESS
- Patent Title (中): 晶体管，半导体器件和晶体管制造工艺
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Application No.: US13072914Application Date: 2011-03-28
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Publication No.: US20110241129A1Publication Date: 2011-10-06
- Inventor: Michihiro Ebe
- Applicant: Michihiro Ebe
- Applicant Address: JP TOKYO
- Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP TOKYO
- Priority: JP2010-079465 20100330
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
The present invention provides a transistor, a semiconductor device and a transistor fabrication process that thoroughly ameliorate electric fields in a transistor element. Namely, the transistor includes a semiconductor substrate, incline portions, a gate electrode, side walls, and a source and a drain. The semiconductor substrate includes a protrusion portion at a surface thereof. The incline portions constitute side surface portions of the protrusion portion and are inclined from the bottom to the top of the protrusion portion. The gate electrode is formed on the top of the protrusion portion, with a gate insulation film interposed therebelow. The side walls are formed on the top of the protrusion portion at two side surfaces of the gate electrode and the gate insulation film. The source and the drain each include a low density region and a high-density region.
Information query
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